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由于其电导率调制效应，与碳化硅（SiC）金属-氧化物-半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET）相比，SiC 绝缘栅双极型晶体管（IGBT）更适合于高压大电流应用，例如柔性高压直流输电（HVDC）。然而，对于数百千伏的直流母线电压，单只器件仍难以满足要求，多只器件串联是一种解决方案。由于电路特性的差异，会产生电压不平衡，因此，本文研究了基于单电压均衡栅极驱动器方案的双管串联 10 kV / 12.5 A SiC IGBT 。首先，分析了双管串联 SiC IGBT 的工作过程。随后建立了基于 SiC IGBT 行为模型的仿真电路，搭建了实验测试平台。在 6.5 kV/ 6A 条件下，实现了 3.69% 的电压不平衡率。此外，在不同直流母线电压和 PWM 周期下的实验结果证明了单电压均衡栅极驱动器方案的鲁棒性。

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